6R1616W1B-YI10 16 Mb asynchronous high-speed SRAM (Static Random Access Memory),
in a 48-pin TSOP1 package, suitable for high-reliability, high-speed electronic system applications.
Key Specifications
Storage Capacity: 16M bits (1M × 16-bit organization)
Operating Voltage: Supports multiple power supply options including 1.8V, 2.5V, and 3.3V
Package Type: 48-pin TSOP1 (also supports 48-ball FBGA and 44-pin TSOP2)
Access Times: Typical values include tAA = 84 ns and tOE = 10 ns (depending on speed grade)
Byte Control: Supports independent access to the low byte (LB) and high byte (UB)
Process Technology: High-speed SRAM technology based on 6-TR CMOS cells
Applications
Industrial control
Medical devices
Communication equipment
High-speed embedded systems
Instrumentation and other fields with high requirements for speed and reliability
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